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Sample text
The exponential increase in transistor count that has occurred over the past few decades was accurately predicted by Gordon Moore in 1965. To continue to power the information technology economy, however, the Si industry must remain on the Moore’s Law trajectory. Because Moore’s Law has accurately predicted the progress of Si technology over the past 38 years, it is considered a reliable method of predicting future trends. These extrapolated trends set the pace of innovation and define the nature of competition in the Si industry.
At the time of this writing, only Ge pMOSFETs have been demonstrated, with several groups attempting to build the first Ge nMOSFETs. Returning to the imminent challenges facing Moore’s Law, one possible solution to the difficult gate-leakage problem is the introduction of high-k (high dielectric constant) gate dielectrics (Wallace and Wilk, 2002). Many different high-k materials, such as Si3N4, HfO2, ZrO2, TiO2, Ta2O5, La2O3, and Y2O3, have been studied for use as a MOSFET gate dielectric. , 2002).
Nanotechology goals and challenges for electronic applications. IEEE Transactions on Nanotechnology 1(1): 56–62. , K. Hyoungsuh, D. B. C. C. Saraswat. 2002. A sub-400/ spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate. International Electron Devices Meeting Technical Digest 437–440. , B. Boyanov, S. Datta, M. Doczy, S. Hareland, B. Jin, J. Kavalieros, T. Linton, R. Rios, R. Chau. 2003. Tri-gate fully-depleted cmos transistors: fabrication, design and layout. Symposium on VLSI Technology, Digest of Technical Papers 133–134.
